RiAC器件降额标准 Electronic Derating For Optimum Performance
| Part Type |
De-rating Parameter |
RAC D-rating Guidelines |
|||
| Severe |
Benign |
NOTES |
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| Capacitors |
Fixed Aluminum |
Voltage |
70% |
80% |
% max rated |
| |
|
Temperature(℃) |
Tmax – 20℃ |
Tmax – 20℃ |
|
| |
Fixed Ceramic |
Voltage |
60% |
70% |
|
| |
|
Temperature(℃) |
Tmax – 10℃ |
Tmax – 10℃ |
|
| |
Fixed Mica/Glass |
Voltage |
60% |
70% |
|
| |
|
Temperature(℃) |
Tmax – 10℃ |
Tmax – 10℃ |
|
| |
Fixed Paper/Plastic |
Voltage |
60% |
70% |
|
| |
|
Temperature(℃) |
Tmax – 10℃ |
Tmax – 10℃ |
|
| |
Fixed Tantalum(non-solid) |
Voltage |
70% |
80% |
|
| |
|
Temperature(℃) |
Tmax – 20℃ |
Tmax – 20℃ |
|
| |
|
Reverse Voltage |
2% |
2% |
|
| |
Fixed Tantalum(solid) |
Voltage |
70% |
80% |
|
| |
|
Temperature(℃) |
Tmax – 20℃ |
Tmax – 20℃ |
|
| |
|
Reverse Voltage |
2% |
2% |
|
| |
Variable Air |
Voltage |
60% |
70% |
|
| |
|
Temperature(℃) |
Tmax – 10℃ |
Tmax – 10℃ |
|
| Circuit Breakers |
General Purpose |
Current |
80% |
90% |
|
| Connectors |
All Types |
Voltage |
70% |
80% |
% of rated DWV |
| |
|
Current |
70% |
85% |
% max rated |
| |
|
Insert Temperature Limit(℃) |
Tmax – 50℃ |
Tmax – 25℃ |
|
| Crystals |
SAW |
Input Power(＞500MHz) |
13 dBm |
10 dBm |
from max |
| |
|
Input Power(＜500MHz) |
18 dBm |
13 dBm |
from max |
| |
|
Temperature(℃) |
90℃ |
90℃ |
|
| Diodes |
General Purpose |
Forward Current(IF) |
90% |
＜100% |
|
| |
(Signal/Switching) |
Reverse Voltage(VR) |
70% |
80% |
|
| |
|
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| |
Mircrowave |
Power Dissipation(PD) |
90% |
＜100% |
|
| |
(Schittky/PIN) |
Reverse Voltage(VR) |
70% |
80% |
|
| |
|
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| |
Power Rectifier |
Forward Current(IF) |
90% |
＜100% |
|
| |
|
Reverse Voltage(VR) |
70% |
80% |
|
| |
|
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| |
Thyristor |
On-State Current(IT) |
90% |
＜100% |
|
| |
|
Off-State Voltage(VR) |
70% |
80% |
|
| |
|
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| |
TVS |
Power Dissipation(PD) |
90% |
＜100% |
|
| |
|
Average Current(IO) |
90% |
＜100% |
|
| |
|
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| |
Voltage Regulator |
Power Dissipation(PD) |
90% |
＜100% |
|
| |
/Reference |
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| Electric Motors |
General Purpose |
Bearing Load |
75% |
75% |
|
| |
|
Temperature(℃) |
Tmax – 25℃ |
Tmax – 25℃ |
|
| Fans |
General Purpose |
Bearing Load |
75% |
75% |
|
| |
|
Temperature(℃) |
Tmax – 25℃ |
Tmax – 25℃ |
|
| Filters |
Capacitor |
Voltage |
60% |
70% |
|
| |
|
Temperature(℃) |
Tmax – 10℃ |
Tmax – 10℃ |
|
| |
Inductors |
Current DC |
90% |
＜100% |
|
| |
|
Temperature(℃) |
Tmax – 25℃ |
Tmax – 25℃ |
|
| Fuzes |
|
Normal Response Current |
80% |
90% |
|
| |
|
Time Delay Current |
50% |
85% |
|
| Hybrids |
Thick Film Resistor |
Power Dissipation(PD) |
50% |
70% |
|
| |
Thin Film Resistor |
Power Dissipation(PD) |
50% |
70% |
|
| |
Chip Resistor |
Power Dissipation(PD) |
50% |
70% |
|
| |
Chip Capacitor |
Voltage |
60% |
70% |
|
| |
General Purpose Diode |
Forward Current(IF) |
90% |
＜100% |
|
| |
|
Reverse Voltage(VR) |
70% |
80% |
|
| |
Mircrowave Diode |
Power Dissipation(PD) |
90% |
＜100% |
|
| |
|
Reverse Voltage(VR) |
70% |
80% |
|
| |
Bipolar Transistor |
Power Dissipation(PD) |
90% |
＜100% |
|
| |
|
Voltage(VCE) |
70% |
80% |
|
| |
Field Effect Transistor |
Power Dissipation(PD) |
90% |
＜100% |
|
| |
|
Breakdown Voltage |
90% |
＜100% |
|
| |
Hybrid Package |
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| Lamp |
Incandescent |
Voltage |
94% |
94% |
|
| |
|
Temperature(℃) |
＜175℃ |
＜175℃ |
|
| |
Neon |
Current |
98% |
98% |
|
| |
|
Temperature(℃) |
＜150℃ |
＜150℃ |
|
| Magnetics |
Transformer(Audio) |
Surge Current |
90% |
＜100% |
|
| |
|
Surge Voltage |
90% |
＜100% |
|
| |
|
Hot Spot Temperature(℃) |
Tmax – 25℃ |
Tmax – 25℃ |
|
| |
Transformer(Power) |
Surge Current |
90% |
＜100% |
|
| |
|
Surge Voltage |
90% |
＜100% |
|
| |
|
Hot Spot Temperature(℃) |
Tmax – 25℃ |
Tmax – 25℃ |
|
| |
Transformer(Pulse) |
Surge Current |
90% |
＜100% |
|
| |
|
Surge Voltage |
90% |
＜100% |
|
| |
|
Hot Spot Temperature(℃) |
Tmax – 25℃ |
Tmax – 25℃ |
|
| |
Coil(RF) |
DC Current |
90% |
＜100% |
|
| |
|
Surge Voltage |
90% |
＜100% |
|
| |
|
Hot Spot Temperature(℃) |
Tmax – 25℃ |
Tmax – 25℃ |
|
| MEMS |
Micro-Electro-Mechanical |
Driving Frequency |
2 |
2 |
Ratio to Resonate Frequency |
| |
System |
Relative Humidity |
40% – 50% |
40% – 50% |
|
| Microcircuits |
Silicon Digital |
Fanout |
90% |
＜100% |
|
| |
(MOS & Bipolar) |
Frequency |
90% |
＜100% |
|
| |
|
Output Current |
90% |
＜100% |
|
| |
|
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| |
Silicon Linear |
Power Dissipation(PD) |
90% |
＜100% |
|
| |
(MOS & Bipolar) |
Output Current |
90% |
＜100% |
|
| |
|
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| |
GaAs Digital |
Max Channel Temperature(TCH) |
105℃ |
125℃ |
|
| |
GaAs Linear |
RF Input Power |
90% |
＜100% |
|
| |
|
Power Dissipation(PD) |
90% |
＜100% |
|
| |
|
Max Channel Temperature(TCH) |
105℃ |
125℃ |
|
| |
SiGe Digital |
Max Channel Temperature(TCH) |
95℃ |
115℃ |
|
| |
SiGe Linear |
Max Channel Temperature(TCH) |
95℃ |
115℃ |
|
| Optoelectronics |
Injection Laser Diode |
Power Output |
50% |
75% |
|
| |
|
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| |
Light Emitting Diode |
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| |
Photo Diode |
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| |
Photo Transistor |
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| |
Fiber Cabel |
Bend Radius |
200% |
200% |
% min. Rating |
| |
|
Cable Tension |
50% |
50% |
% Rated Strength |
| |
|
Fiber Tension |
20% |
20% |
% Proof Test |
| Relays |
General Purpose |
Contact Current |
75% R Load |
90% R Load |
|
| |
|
|
75% C Load |
90% C Load |
|
| |
|
|
40% L Load |
75% L Load |
|
| |
|
|
20% Motor |
30% Motor |
|
| |
|
|
10% Filament |
20% Filament |
Lamp |
| |
|
Contact Power |
50% |
70% |
|
| |
|
Temperature(℃) |
Tmax – 20℃ |
Tmax – 20℃ |
|
| Resistors |
Fixed Composition |
Power Dissipation(PD) |
50% |
70% |
|
| |
|
Temperature(℃) |
Tmax – 30℃ |
Tmax – 18℃ |
|
| |
Fixed Film |
Power Dissipation(PD) |
50% |
70% |
|
| |
|
Temperature(℃) |
Tmax – 40℃ |
Tmax – 24℃ |
|
| |
Fixed Wirewound |
Power Dissipation(PD) |
50% |
70% |
|
| |
|
Temperature(℃) |
Tmax – 10℃ |
Tmax – 6℃ |
|
| |
Variable Non-Wirewound |
Power Dissipation(PD) |
50% |
70% |
|
| |
|
Temperature(℃) |
Tmax – 52℃ |
Tmax – 31℃ |
|
| |
Variable Wirewound |
Power Dissipation(PD) |
50% |
70% |
|
| |
|
Temperature(℃) |
Tmax – 32℃ |
Tmax – 19℃ |
|
| Switches |
General Purpose |
Contact Current |
75% R Load |
90% R Load |
|
| |
|
|
75% C Load |
90% C Load |
|
| |
|
|
40% L Load |
75% L Load |
|
| |
|
|
20% Motor |
30% Motor |
|
| |
|
|
10% Filament |
20% Filament |
|
| |
|
Contact Power |
50% |
70% |
|
| |
|
Contact Current(Surge) |
80% |
80% |
|
| Thermistors |
|
Power Dissipation(PD) |
50% |
50% |
|
| |
|
Temperature(℃) |
Tmax – 50℃ |
Tmax – 50℃ |
|
| Transistors |
Bipolar Junction |
Power Dissipation(PD) |
90% |
＜100% |
|
| |
|
Breakdown Voltage(VCE) |
70% |
80% |
|
| |
|
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| |
FET(Silicon) |
Power Dissipation(PD) |
90% |
＜100% |
|
| |
|
Breakdown Voltage(VBR) |
90% |
＜100% |
|
| |
|
Max Junction Temperature(TJ) |
95℃ |
115℃ |
|
| |
FET(GaAs) |
Power Dissipation(PD) |
90% |
＜100% |
|
| |
|
Max Channel Temperature(TCH) |
105℃ |
125℃ |
|
| |
Hetro Junction Bipolar |
Power Dissipation(PD) |
90% |
＜100% |
|
| |
(GaAs) |
Max Channel Temperature(TCH) |
105℃ |
125℃ |
|
| |
High Mobility(GaAs) |
Power Dissipation(PD) |
90% |
＜100% |
|
| |
|
Max Channel Temperature(TCH) |
105℃ |
125℃ |
|
| Tubes |
Cathode Ray |
Power Output |
90% |
80% |
|
| |
|
Temperature(℃) |
Tmax – 20℃ |
Tmax – 20℃ |
|
| |
Microwave |
Power Output |
80% |
80% |
|
| |
|
Reflection Power |
50% |
50% |
|
| |
|
Duty Cycle |
75% |
75% |
|
| |
|
Temperature(℃) |
Tmax – 20℃ |
Tmax – 20℃ |
|
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